发明名称 Semiconductor device and manufacturing method thereof
摘要 Photosensitive insulating films are laminated and formed on lower-layer interconnection layers and a connection hole is formed in the photosensitive insulating film, and a interconnection groove is formed on the photosensitive insulating film. The upper-layer interconnection layers are formed in a manner so as to fill the connection hole and the groove. With this arrangement, it is possible to provide a semiconductor device and a manufacturing method thereof having a multi-layer interconnection structure, which have advantages in that the connection hole and a groove are formed by using a simple process, the yield can be improved and the number of processes and the costs can be reduced.
申请公布号 US2002137328(A1) 申请公布日期 2002.09.26
申请号 US20010895070 申请日期 2001.07.02
申请人 TOYODA YOSHIHIKO 发明人 TOYODA YOSHIHIKO
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L23/48;H01L21/44;H01L21/476;H01L23/52;H01L29/40 主分类号 H01L21/768
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