| 摘要 |
<p>A method and a device for exposure allowing the replacement of an exposed object in a sealed chamber without abruptly increasing the density of impurities inside the sealed chamber when gas allowing exposure beam to be transmitted therethrough is fed into the sealed chamber for storing the exposed object; the method, comprising the steps of storing a wafer stage system (WST) in a wafer chamber (38), storing wafer loader systems (WLDA, WLDB) in load lock chambers (72A, 72B) and a wafer transfer chamber (73), feeding high purity purge gas from an air supply device (5) to the wafer chamber (38), feeding a part of the gas inside the wafer chamber (38) to the load lock chambers (72A, 72B) through bypass pipes (61A, 61B), feeding a part of the gas inside the load lock chambers to the wafer transfer chamber (73) through the bypass pipes (62A, 62B), and recycling the gas inside the wafer chamber (38) and load lock chambers (72A, 72B) through a collecting device (4).</p> |
