Silicon carbide semiconductor device and method for manufacturing the same

摘要

In an accumulation mode MOSFET, a surface channel layer is disposed on a p- type base region between an n+ type source region and an n- type epi layer. The surface channel layer is composed of an n type channel layer formed on the p- type base region and a p type channel layer formed on the n type channel layer. A gate insulating film is formed on the p type channel layer. A channel is formed in the n type channel layer. Accordingly, channel mobility can be improved and on-resistance can be reduced without being affected by a state of an interface between the gate insulating film and the surface channel layer.