Metallic optical barrier for photo-detector array is also interconnecting electrode

摘要

The number of masking operations needed to connect photo-return current to ground or a bias potential can be reduced by collecting and rearranging the conventional steps to become:(A) Depositing a P layer of hydrogenated amorphous silicon (a-Si:H) upon an underlying layer of intrinsic hydrogenated amorphous silicon, and a layer of conductive ITO on top of the P layer;(B) Patterning all three of the layers deposited in step (A); and(C) Depositing and then patterning the layer of W that serves as the optical barrier.The above steps (A)-(C) require only two masking operations, in comparison to three for the conventional method. In addition, the W layer can be used to connect the ITO to ground or the bias potential.