Integrated circuit interconnect shunt layer

摘要

An integrated circuit and manufacturing method therefor is provided for an integrated circuit on a semiconductor substrate grated circuit having a semiconductor device. A dielectric layer is on the semiconductor substrate and has an opening provided therein. A barrier layer lines the opening, and a first conductor core fills the opening over the barrier layer. A second dielectric layer is formed on the first dielectric layer and has a second channel and via opening provided therein. A shunt layer is in the via opening above the conductor core. A barrier layer lines the second channel and via opening over the shunt layer and the second dielectric layer. A conductor core fills the second channel and via opening over the barrier layer and the first conductor core to form the second channel and via.