| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which can prevent polishing remainder of copper, by reducing the swell of the copper in a plating growth operation in a dual-damascene process. SOLUTION: By an electrolytic plating method, a copper-plated layer is formed over the whole face of a semiconductor substrate, including the inside of a wiring groove and a connecting hole. At this time, when it is subjected to electrolytic plating so as to be divided into two or more operations, swelling of the copper generated on the wiring groove is reduced, and the polishing remainder of the copper in subsequent CMP processes is prevented.
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