| 摘要 |
PROBLEM TO BE SOLVED: To obtain a GaN based semiconductor laser element having a highly reliable window structure by a simple method. SOLUTION: A p-type contact layer 20 of an Mg doped GaN semiconductor is formed on the uppermost layer of a multilayer sample 31 comprising a plurality of GaN based semiconductor layers. Under a state that a region of a 60μm width around a cleavage line A on the end face of a resonator is covered with a UV-ray mask material 28, the p-type contact layer 20 is irradiated with UV-rays and then the multilayer sample 31 is heat-treated.
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