Semiconductor device has semiconductor body and associated carrier provided with flip-chip connections and furhter connections for dissipation of waste heat

摘要

The semiconductor device (1) has a semiconductor body (2) with an electronic circuit (4) covered by a metallised layer (16) and a carrier (6) for the semiconductor body. A second metallised layer (5) and a solder connection (8) provide an electrical connection between the semiconductor body and a metallisation layer (7.1) of the carrier (6), which is provided with ball-grid-array contacts on its opposite side, the waste heat in the semiconductor body dissipated via further connections (8',9.1) between the latter and the carrier.