| 摘要 |
<p>A low-dimensional plasmon light emitting device for converting an injection current energy into a light energy widely ranging from far IR to UV regions, wherein a low-dimensional conduction structure is built into the inside of or on the surface of a semiconductor or a dielectric, and a periodic fine structure, having a real space frequency D1=2π/q1 with a wave number q1 giving a specific light emitting energy (h/2π1)φ1 on the wave number-energy curve of the low-dimensional plasmon, is formed in the extreme vicinity of or inside the low-dimensional conduction structure. The low-dimensional conduction structure includes a quantum well structure formed inside a semiconductor or a dielectric, a space charge layer formed on the surface of a semiconductor or a dielectric or on a hetero interface, and a high-carrier-density surface electron band or an interface electron band formed on the surface of a semiconductor or a dielectric or on a hetero interface. The periodic fine structure includes a periodic structure formed of a metal thin wire or by etching, a thin film periodic structure grown on an atomic-level step surface, and a periodic structure-built-in organic molecule or polymer epitaxial or polymer thin film.</p> |
