| 摘要 |
When forming, on a base conductive material, a metal oxide dielectric film having an ABO3 crystal structure by using an organic metal material gas, the initial nucleus of a perovskite crystal or the initial amorphous layer of an amorphous structure is formed on the base conductive material under a first film-forming condition, and then a perovskite-crystal-structure film is grown on the formed crystal initial nucleus or initial amorphous layer under a second film-forming condition; the first film-forming condition requiring at least either (a) a substrate lower than that required by the second film-forming condition, or (b) a material gas pressure higher than that required by the second film-forming condition. This method can grow a film such as a PZT film with a minimum leak current.
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