METHOD FOR FABRICATING TRANSISTOR

摘要

PURPOSE: A method for fabricating a transistor is provided to form an impurity region shallower than a conventional impurity region using boron ions and increase an activation degree of ions implanted through a drive-in process beyond solid solubility by using indium ions as LDD implantation ions and performing a drive-in process using laser. CONSTITUTION: A gate electrode(17) is formed on an n-type semiconductor substrate(11) by interposing a gate insulation layer(15). Low density indium ions are implanted into the surface of the semiconductor substrate at both sides of the gate electrode. A drive-in process using laser is performed to form the first source/drain impurity region(20). A buffer layer and the first insulation layer spacer are formed on the sidewall of the gate electrode. High density p-type impurity ions are implanted into the surface of the semiconductor substrate at both sides of the gate electrode including the first insulation layer spacer to form the second source/drain impurity region.