发明名称 Method for reducing borderless contact leakage by OPC
摘要 This invention increases the overlapped area between the diffusion area and the borderless contact by using optical proximity correction (OPC) method. The method includes performing an optical proximity correction on an outer corner of an active area mask to enlarge a portion of an outer corner of an active area on a substrate in a photolithography process, wherein the outer corner of the active area is used to make contact with a borderless contact. The enlarged portion of the outer corner of the active area increases the overlapped area between the borderless contact and the active area, and reduces borderless contact leakage.
申请公布号 US6451680(B1) 申请公布日期 2002.09.17
申请号 US20010774456 申请日期 2001.01.31
申请人 UNITED MICROELECTRONICS CORP. 发明人 WANG HSUEH-WEN
分类号 G03F1/14;G03F7/20;(IPC1-7):H01L21/44 主分类号 G03F1/14
代理机构 代理人
主权项
地址
您可能感兴趣的专利