METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICES

摘要

A method for forming a metal wire of a semiconductor device is provided to reduce an increasing rate of metal wire resistance after sintering and to prevent generation of void due to an aluminium layer. A first titanium layer(200) for maintaining adhesive power of a metal and a silicon oxide layer is deposited on an interlayer dielectric. An aluminium layer(204) is deposited on an upper portion of the first titanium layer. Nitrogen is implanted into a chamber and nitrogen soaking is performed to generate a nitride aluminium layer(206) of a thin film on the upper portion of the aluminium layer. A second titanium layer(208) and a nitride titanium layer(210) are deposited in turn on the upper portion of the nitride aluminium layer to form a metal wire. The aluminium layer is deposited at 300 to 350°C atmosphere through a standard sputtering manner.