发明名称 |
METHOD FOR CLEANING CHAMBER |
摘要 |
PURPOSE: A method for cleaning a chamber is provided to improve efficiency in a cleaning process of a chamber by applying continuously RF power to a chamber in the cleaning process. CONSTITUTION: A remote plasma apparatus forms a cleaning gas including a fluorine radical(S10). The remote plasma apparatus is connected with a chamber. The generated cleaning gas is transferred from the remote plasma apparatus to an inside of the chamber(S12). The cleaning gas is the fluorine radical and ions which are formed by exciting NF3 gas in the remote plasma apparatus. At this time, inert gas is injected into the remote plasma apparatus, simultaneously. The inert gas is selected from a group including nitrogen, argon, and helium. All depositions of the chamber are etched and exhausted by the cleaning gas. An RF power is applied to the chamber(S14).
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申请公布号 |
KR20020071399(A) |
申请公布日期 |
2002.09.12 |
申请号 |
KR20010011534 |
申请日期 |
2001.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HO SIK;KIM, TAE HUN;PARK, JONG SAN |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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地址 |
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