发明名称 |
Method of preparing indium phosphide heterojunction bipolar transistors |
摘要 |
InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.
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申请公布号 |
US2002125498(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20020041657 |
申请日期 |
2002.01.08 |
申请人 |
KOPIN CORPORATION |
发明人 |
WELSER ROGER E.;DELUCA PAUL M.;LANDINI BARBARA E. |
分类号 |
H01L21/205;H01L21/331;H01L29/207;H01L29/737;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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