| 摘要 |
<p>A nitride based semiconductor laser element (10) has a structure where a first contact layer (14), a first clad layer (16), an active layer (20), a second clad layer (24), a second contact layer (26), and a second electrode (30) are laid sequentially in layers. The second clad layer (24) comprises a lower layer (24A) and an upper layer (24B), the first contact layer (14), the active layer (20) and the lower layer (24A) of the second clad layer have a mesa structure, and the upper layer (24B) of the second clad layer and the second contact layer (26) have a ridge structure. Above a part of the lower layer (24A) of the second clad layer corresponding to the top face of the mesa structure, an insulation layer (40) is formed to cover the opposite side faces of the upper layer (24B) of the second clad layer at least partially and a metal layer (42) having a width substantially the same as that of the mesa structure is formed from the top face of the insulation layer (40) to the top face of the second electrode (30).</p> |
