| 摘要 |
An improved electrical connection between a metal surface and a semiconductor surface is provided by the deposition of a conductive dimple on the metal surface, whereby the conductive dimple is interposed between the metal surface and the semiconductor substrate. For example, a conductive trace deposited on an insulating substrate may have a conductive dimple formed thereon. A semiconductor substrate, such as a silicon substrate, may be bonded to the insulating substrate over at least a portion of the metal trace having the dimple thereon to form an electrical connection between the semiconductor substrate and the conductive trace. |
