METHOD FOR PLANARIZING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for planarizing an interlayer dielectric of a semiconductor device is provided to prevent a bridge phenomenon caused by a scratch by performing an etch-back process through dry and wet processes so that the scratch generated after the first planarization process can be eliminated. CONSTITUTION: A plurality of interconnection layers are formed on a semiconductor substrate. An interlayer dielectric is formed on the front surface of the semiconductor substrate including the interconnection layer. The interlayer dielectric is firstly planarized through a chemical mechanical polishing(CMP) process. The planarized interlayer dielectric is secondly planarized through an etch-back process.