| 摘要 |
PURPOSE: A method for fabricating a hafnium oxide layer is provided to improve electrical uniformity of the hafnium oxide layer according to the position inside a wafer by performing an ammonia plasma process before the hafnium oxide layer is deposited. CONSTITUTION: An ammonia plasma treatment process is performed on a semiconductor substrate. The hafnium oxide layer is formed on the semiconductor substrate. Any one of a radio frequency(RF) method, an electron beam method, an electro cyclotron resonance(ECR) method, a remote plasma method, a gas mixture method or a composite method thereof is used in the ammonia plasma treatment process.
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