METHOD FOR GROWING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To manufacture at a high productivity a silicon single crystal, in which the external diameter of a latent area of oxidation induced stacking faults appearing in a crystal face is controlled to the range of 0-70% of its crystal diameter, and which is excellent in pressure resistant characteristics of oxide film, and especially to manufacture at a high productivity a single crystal consisting of a crystal area where crystal originated particles(COP) having the size of >=0.1μm do not exist and neither does a dislocation cluster. SOLUTION: A pair of coils 6 for applying a magnetic field is so arranged around a chamber 8 that the coils are opposed to each other with a crucible 1 placed in between. A cusp magnetic field is formed in a molten liquid 4 in the crucible 1 by applying an electric current to the pair of an upper coil 6a and a lower coil 6b respectively so that the applied current circulates inversely to each other. An electric current is applied to the silicon molten liquid 4 in the quartz crucible 1a by applying a voltage between a pulling-rise and fall shaft 7 and a crucible lifting/lowering shaft by an electric power source 13 arranged outsider the chamber 8.