| 摘要 |
The present invention relates to a short wavelength ZnO light emitting device and the manufacturing method thereof, which forms materials of p-type by doping Zn on InP, deposits a thin layer of ZnO on an upper surface of the doped layer and forms a p-n junction, thereby obtaining a stable crystal structure and enhances the effectiveness. The short wavelength ZnO light emitting device comprises a Zn doped InP layer of p-type formed by doping Zn on a substrate of InP and then replacing In with Zn; and a ZnO layer deposited on the Zn doped InP substrate whereby a forward bias voltage is applied to the doped InP and the ZnO layers, which are doped Zn, thereby obtaining a light emitting characteristic of short wavelength. A ZnO-based semiconductor light emitting device can be used as a blue and purple light source, and is expected to have more excellent characteristics in displays.
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