发明名称 |
Transfer circuit of semiconductor device and structure thereof |
摘要 |
A semiconductor transfer circuit and a structure thereof are provided. The transfer circuit and the structure thereof include a stack gate MOS transistor having first and second gate electrodes that are sequentially stacked and a control MOS transistor connected to the stack gate MOS transistor. A drain of the control MOS transistor is connected to the first gate electrode.
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申请公布号 |
US2002121659(A1) |
申请公布日期 |
2002.09.05 |
申请号 |
US20010948201 |
申请日期 |
2001.09.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HUR SUNG-HOI |
分类号 |
G11C11/40;H01L21/02;H01L21/768;H01L27/06;H01L27/115;(IPC1-7):H01L21/336;H01L29/76;H01L29/788 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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