发明名称 Transfer circuit of semiconductor device and structure thereof
摘要 A semiconductor transfer circuit and a structure thereof are provided. The transfer circuit and the structure thereof include a stack gate MOS transistor having first and second gate electrodes that are sequentially stacked and a control MOS transistor connected to the stack gate MOS transistor. A drain of the control MOS transistor is connected to the first gate electrode.
申请公布号 US2002121659(A1) 申请公布日期 2002.09.05
申请号 US20010948201 申请日期 2001.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HUR SUNG-HOI
分类号 G11C11/40;H01L21/02;H01L21/768;H01L27/06;H01L27/115;(IPC1-7):H01L21/336;H01L29/76;H01L29/788 主分类号 G11C11/40
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