Verfahren zur Submikrometer-Strukturierung von Siliziden sowie dadurch hergestellte Bauteile

摘要

The invention relates to a self-aligned patterning method for producing submicrometer patterns in silicide layers on a substrate. The inventive method is characterized by applying a metal layer to a substrate, said metal layer being capable of reacting with the substrate to give a silicide layer. Masks are then applied to the metal layer. The distribution of stresses generated by the mask is changed by producing in said mask cuts, that is notches that extend to the surface of the metal layer formed. On the bottom of such a notch the electric field is regularly stronger. A voltage-dependent solid state reaction (silicidation) generates the desired nanometer pattern of the silicide layer formed. For example, the silicidation reaction takes only place in the area below the mask while on the bottom of the notch no silicidation takes place. The invention provides a method for producing, in combination with some further process steps, various MOSFETs.