发明名称 |
Electron source |
摘要 |
A semi-conductor electron source (102) includes a planar emission region (114) for generating an electron emission, and a focusing structure (118, 120) for focusing the electron emission into an electron beam. The emission region (114) may be a porous region located in a layer on an active substrate (104). The focusing structure may include an aperture (122) through which electron emission is focused. <IMAGE> |
申请公布号 |
EP1237174(A1) |
申请公布日期 |
2002.09.04 |
申请号 |
EP20020251172 |
申请日期 |
2002.02.20 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
KUO, HUEI-PEI;BIRECKI, HENRYK;LAM, SI-TY;NABERHUIS, STEVEN LOUIS |
分类号 |
H01J1/312;G11B9/00;G11B9/10;H01J3/02;H01J3/18 |
主分类号 |
H01J1/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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