发明名称 Electron source
摘要 A semi-conductor electron source (102) includes a planar emission region (114) for generating an electron emission, and a focusing structure (118, 120) for focusing the electron emission into an electron beam. The emission region (114) may be a porous region located in a layer on an active substrate (104). The focusing structure may include an aperture (122) through which electron emission is focused. <IMAGE>
申请公布号 EP1237174(A1) 申请公布日期 2002.09.04
申请号 EP20020251172 申请日期 2002.02.20
申请人 HEWLETT-PACKARD COMPANY 发明人 KUO, HUEI-PEI;BIRECKI, HENRYK;LAM, SI-TY;NABERHUIS, STEVEN LOUIS
分类号 H01J1/312;G11B9/00;G11B9/10;H01J3/02;H01J3/18 主分类号 H01J1/312
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