发明名称 |
Aggregate dielectric layer to reduce nitride consumption |
摘要 |
<p>A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substrate. An apparatus including a substrate and an aggregate formed over the substrate including a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous.</p> |
申请公布号 |
EP1237182(A2) |
申请公布日期 |
2002.09.04 |
申请号 |
EP20020250813 |
申请日期 |
2002.02.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MUKAI, KEVIN M.;CHANDRAN, SHANKAR |
分类号 |
H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L23/532;(IPC1-7):H01L21/310;H01L23/31;H01L23/29 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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