发明名称 Aggregate dielectric layer to reduce nitride consumption
摘要 <p>A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substrate. An apparatus including a substrate and an aggregate formed over the substrate including a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous.</p>
申请公布号 EP1237182(A2) 申请公布日期 2002.09.04
申请号 EP20020250813 申请日期 2002.02.06
申请人 APPLIED MATERIALS, INC. 发明人 MUKAI, KEVIN M.;CHANDRAN, SHANKAR
分类号 H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L23/532;(IPC1-7):H01L21/310;H01L23/31;H01L23/29 主分类号 H01L21/31
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