| 摘要 |
PROBLEM TO BE SOLVED: To improve coupling between a floating gate electrode and a control gate electrode of a non-volatile semiconductor memory device. SOLUTION: The non-volatile semiconductor memory device has a semiconductor substrate 1 with a major surface, a floating gate electrode 8 having a doped polysilicon film 6 formed on the major surface via a thermal oxide film 4 and a doped polysilicon film 7, which is laminated on the doped polysilicon film 6 and has a raised wall 7a, an insulation film 9, formed to cover the doped polysilicon film 7 and a control gate electrode 35 formed on the insulation film 9.
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