| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a circuit pattern being formed on the surface of an insulating substrate and a pattern being formed on the rear surface thereof in which the reliability can be enhanced by protecting the insulating substrate and solder against cracking and suppressing spread of crack significantly even if the solder is cracked. SOLUTION: A circuit pattern and a rear surface pattern are formed of an aluminum alloy and a relation Lp=0.85Lu-1.15Lu is set between the dimension Lu from the end face of an insulating basic material to the end face of the circuit pattern and the dimension Lp from the end face of the insulating basic material to the end face of the rear surface pattern. Furthermore, relations of tp<=0.4tu and 0.05<=tp<=0.2 mm are satisfied between the thickness tu of the circuit pattern and the thickness tp of the rear surface pattern. |
