ALUMINUM NITRIDE, FIELD EFFECT TRANSISTOR OF ALUMINUM OXIDE/ALUMINUM NITRIDE HETERO-STRUCTURE GATE DIELECTRIC STACK BASE, AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method and structure for using a thin gate dielectric substance in a semiconductor device, such as a field effect transistor, etc. SOLUTION: The structure (for example, a field effect transistor) and a method for manufacturing the structure are provided with a substrate having a source region, a drain region, and a channel region provided between the source and drain regions, an insulating layer arranged on the channel region, and a gate electrode arranged on the insulating layer. The insulating layer includes an aluminum nitride-containing layer arranged on the channel region.