STORAGE CELL, MEMORY MATRIX USING THE SAME, AND THEIR MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To enhance the address velocity by constituting a storage cell consisting of a storage element using chalcogenide material and a diode element for inputting information into or outputting it from this. SOLUTION: A storage cell 20 is made of the storage element 24 including a chalcogenide layer 34 and the diode element 22 consisting of group 6 semiconductor material. The diode element 22 is composed of an Se layer 26 on the side of a first address line and a CdSn alloy layer 28 stacked hereon.