| 摘要 |
A method of forming material layers on a substrate using atomic gas is provided. A substrate is heated to an elevated temperature and is exposed to an atomic gas. The atomic gas reacts at a surface of the substrate to form a material layer thereon. The source of atomic gas preferably comprises a molecular gas source operatively coupled to a remote microwave plasma system that dissociates the molecular gas into highly reactive atomic gas. Gate quality silicon dioxide, oxynitride and silicon nitride may be formed by the dissociation of O2, O2 and N2 or NH3, and N2 or NH3, respectively, at reduced temperatures (e.g., about 600-650° C.).
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