发明名称 |
Method for fabricating semiconductor device |
摘要 |
The method for fabricating the semiconductor device comprises the step of: forming a gate insulation film 14 on a semiconductor substrate 10; forming a semiconductor layer 22 containing boron on the gate insulation film 14; forming a silicon nitride film 28 having an Si-H bond concentration in the film immediately after deposited which is below 4.3x1020 cm-3 measured by FT-IR; and patterning the silicon nitride film 28 and the semiconductor layer 22 to form a gate electrode 30 of a semiconductor layer 22 having the upper surface covered by the silicon nitride film 28. Whereby the release of hydrogen in the films in the thermal processing after the silicon nitride film has been formed can be decreased, and the boron penetration from the p-type gate electrode 30p can be suppressed.
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申请公布号 |
US2002119648(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20010939639 |
申请日期 |
2001.08.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
INOUE FUMIHIKO;TANAKA MASAYUKI |
分类号 |
H01L29/78;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L21/3205;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/320 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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