摘要 |
A method of fabricating Cu alpha (InxGa1-x) beta (SeyS1-y) gamma films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cu alpha (InxGa1-x) beta (SeyS1-y) gamma film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group. <IMAGE> |