| 摘要 |
A transistor device on an SOI wafer includes a metal connect that is in contact with an underside (a bottom surface) of a body of the device. A part of the metal connect is between an active semiconductor region of the device and an underlying buried insulator layer. The metal connect is also in contact with a source of the device, thereby providing some electrical coupling between the source and the body, and as a result reducing or eliminating floating body effects in the device. A method of forming the metal interconnect includes etching away part of the buried insulator layer, for example by lateral etching or isotropic etching, and filling with metal, for example by chemical vapor deposition.
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