发明名称 |
Semiconductor device with copper wiring and its manufacture method |
摘要 |
The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.
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申请公布号 |
US6440844(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US19980111799 |
申请日期 |
1998.07.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKAGI HIDEO;IZUMI KIYOSHI;FUTO WATARU;OTSUKA SATOSHI;UJI SHIGETAKA;HOSHINO MASATAKA;SATOH YUKIHIRO;ENDO KOJI;OHTA YUZURU;MISAWA NOBUHIRO |
分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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