发明名称 POLYMER COMPOUND, RESIST MATERIAL, AND PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polymer compound which is sensitive to high-energy rays, is excellent in sensitivity particularly in a wavelength range of 170 nm or lower, and has improved transparency and excellent plasma-etching resistance. SOLUTION: This polymer compound contains repeating units represented by formulas (1a) and (1c) or represented by formulas (1a), (1b), and (1c) [wherein R1, R2, R5, R6, and R7 are each H, F or a fluorinated alkyl group; R3 is F or a fluorinated alkyl group; R4 and R8 are each an acid-unstable group, an adhesive group, H or an optionally fluorinated alkyl group; R9a, R9b, R10a, and R10b are each H, OH, an optionally fluorinated alkyl group, (CH2)eCO2R11 or (CH2)eC(R12)2(OR11); R11 is an acid-unstable group, an adhesive group, H or an optionally fluorinated alkyl group; R12 is a fluorinated alkyl group; 0<a<1; 0<=b<1; 0<c<1; 0<a+b+c<=1; d is 0 or 1; and 0<=e<=6].
申请公布号 JP2002234916(A) 申请公布日期 2002.08.23
申请号 JP20010033262 申请日期 2001.02.09
申请人 SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD;CENTRAL GLASS CO LTD 发明人 HARADA YUJI;HATAKEYAMA JUN;WATANABE ATSUSHI;KAWAI YOSHIO;SASAKO MASARU;ENDO MASATAKA;KISHIMURA SHINJI;OTANI MITSUTAKA;MIYAZAWA SATORU;TSUTSUMI KENTARO;MAEDA KAZUHIKO
分类号 G03F7/033;C08F220/10;C08F232/00;C08F232/08;C08K5/00;C08L33/04;C08L45/00;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/033
代理机构 代理人
主权项
地址