| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a semiconductor, for example, which is formed on an active matrix substrate from peeling. SOLUTION: A plurality of electrode wirings arranged in lattice form, an active element disposed for each lattice of the electrode wirings, a layer insulation film 31 provided to an electrode wiring and the upper layer of an active element and a plurality of charge collection electrode 24 formed on the layer insulation film 31 are provided on an insulation substrate 21. The layer insulation film 31 is disposed to cover a pixel arrangement region 14, where an electrode wiring is arranged in lattice form at least in a part of its peripheral region 15. An irregular part 17, formed of at least one of a recessed part and a projection part, is formed in at least a part of an upper surface of the layer insulation film 31 of the peripheral region 15. A semiconductor, for example, which is formed on an active matrix substrate, is prevented from peeling by the irregular part 17.</p> |
