| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the occurrence of a parasitic transistor, having low threshold voltage in a portion covered with a gate electrode at the boundary between an SOI active layer and a mesa-type element separating region can be prevented effectively, and to provide a method of manufacturing the device. SOLUTION: The semiconductor device has an embedded insulating film 102 formed on a substrate 101, a semiconductor layer (SOI layer) 103 and the element isolation region 104 formed on the insulating film 102, a channel-forming region, a source region, and a drain region all of which are formed as parts of the semiconductor layer 103; a gate insulating film 109 formed on the channel- forming region, first and second side walls 106 and 108 formed at the boundary between the semiconductor layer 103 and element isolation region 104 and composed of insulating films; a gate electrode 110 formed on parts of the gate insulating film 109 and element separating region 104 via the sidewalls 106 and 108; and the method is used for manufacturing the semiconductor device.
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