| 发明名称 |
Low dielectric constant sidewall spacer using notch gate process |
| 摘要 |
A notched gate MOS device includes either an encapsulated low dielectric material or encapsulated air or a vacuum at the bottom of a notched gate. Due to the low dielectric constant at the site of interface between the gate and the source/drain, the capacitance loss at that site is significantly reduced.
|
| 申请公布号 |
US6437377(B1) |
申请公布日期 |
2002.08.20 |
| 申请号 |
US20010768525 |
申请日期 |
2001.01.24 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AJMERA ATUL C.;FUNG KA HING (SAMUEL);KU VICTOR;SCHEPIS DOMINIC J. |
| 分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L27/10 |
主分类号 |
H01L29/43 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
