| 摘要 |
A silicon oxide film (6aa) is formed on an upper surface of an SOI layer (3), a silicon nitride film (6bb) is formed on the silicon oxide film (6aa), and a silicon oxide film (6cc) is formed on the silicon nitride film (6bb). Using the silicon nitride film (6bb) as an etch stopper, anisotropic dry etching is performed on the silicon oxide film (6cc) in first and second device formation regions. Then, using the silicon oxide film (6aa) as an etch stopper, anisotropic dry etching is performed on the silicon nitride film (6bb) in the first and second device formation regions. The silicon oxide film (6aa) in the first and second device formation regions is removed by wet etching using hydrofluoric acid to expose the upper surface of the SOI layer (3). A method of manufacturing a semiconductor device is provided which is capable of avoiding the formation of a damaged layer in a main surface of an SOI substrate when such a device isolation structure is formed.
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