SEMICONDUCTOR DEVICE HAVING ANTI-FUSE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having an anti-fuse and a method for fabricating the same are provided to replace a bad cell and a bad circuit with a spare cell and a spare circuit by a wire connection method using laser. CONSTITUTION: A lower insulating layer(100) is formed on a substrate. The first conductive layer pattern(101) is formed on the lower insulating layer(100). The first conductive layer pattern(101) is formed by aluminium or cooper. An interlayer dielectric(102) is formed on the lower insulating layer(100) and the first conductive layer pattern(101). The second conductive layer pattern(103) is formed on the interlayer dielectric(102). The second conductive layer pattern(103) is formed by a silicon oxide layer or a silicon nitride layer. The second conductive layer pattern(103) is covered by an upper insulating layer(104).