METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to improve an operation characteristic and to prevent an attenuation of a gate oxide by additional processes. CONSTITUTION: After sequentially depositing a nitride(106) and a CVD(Chemical Vapor Deposition) oxide on the first and the second active regions(I,II), a substrate of the second active region(II) is exposed using the CVD oxide patterned by a photolithography as a mask. At this time, the patterned CVD oxide is the CVD oxide remaining on the first active region(I) and the deposition processes of the nitride(106) and the CVD oxide are additional processes. Then, a thermal oxide(112) is selectively formed on the exposed substrate, thereby preventing a thick thermal oxide removal process on the first active region(I) when forming a gate oxide of the second active region(II).