| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of SOI wafers where the heat treatment temperature is low, surface roughness can be smoothed, and film thickness can be easily controlled, and to provide the SOI wafers having improved, in various characteristics. SOLUTION: This manufacturing method of the SOI wafers includes a process for forming one of Al2O3, TiO2, and Ta2O3 insulating film layers on a silicon wafer with specific thickness, a process for bonding a silicon wafer where the insulating film layer is formed to other silicon wafers, a process for cutting a bonded lamination wafer, and a process for polishing the cut lamination wafer. Also, in the SOI wafers, the insulating film layer should be Al2O3, TiO2, or Ta2O3.
|
