METHOD FOR MEASURING SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring a semiconductor wafer which can determine simply good or bad of electric characteristics such as luminance of an electronic device semiconductor wafer such as a light-emitting device in a non-destructive manner. SOLUTION: Electric characteristics of a semiconductor wafer are measured, while measuring diffracted rays derived from a prescribed crystal face from a semiconductor single crystal substrate when incident beams of fixed wavelength which cause a diffraction phenomenon due to a semiconductor crystal lattice are incident on a main surface of the semiconductor wafer, and a relation (diffracted rays/characteristic relationship) between measurement information of the diffracted rays and the electric characteristics is determined. The incident beams are incident on the semiconductor wafer as an evaluation object to measure the diffracted rays, and the electric characteristics of the semiconductor wafer as the corresponding evaluation object are estimated based on the measurement results and the diffracted rays/characteristic relationship.