| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory and a control circuit therefor in which the access time is short, the throughput to be an effective access time is improved preferably, and which can perform a high speed access operation. SOLUTION: This device is provided with a register holding temporarily an address being effective in one cycle before and an access request signal, or the like, and a control circuit in which read-out and write-in operation timing generated simultaneously in one cycle are decided by generation of a read-out pulse signal, a write-in pulse signal which are adjusted preferably and separately for read-out and write-in, or the like. The access operation for a memory cell array is performed by the address held temporarily in the register and the access request signal based on the pulse signal generated in the above.
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