发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND EPITAXIAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element, which can be made having a semiconductor light emitting element consisting of one kind of material as a base by simple method, and by which the light emission of various tints including white and middle colors can be obtained, and an epitaxial wafer at low prices. SOLUTION: In the semiconductor light emitting element where at least a lower clad layer 3 of the first conductivity type, a luminous layer 4 smaller in band gap energy than that of the lower clad layer, an upper clad layer 6 of the second conductivity type larger in band gap energy than that of luminous layer are stacked on a substrate 1, a semiconductor layer including one or more kinds of rare earth elements is inserted into a side upper or a side lower than the above luminous layer 4, and the rare earth element doped in this insertion layer 5 produces fluorescence, being excited by the light emitted from the above luminous layer 4.
申请公布号 JP2002232008(A) 申请公布日期 2002.08.16
申请号 JP20010029300 申请日期 2001.02.06
申请人 HITACHI CABLE LTD 发明人 OSHIMA YUICHI;SHIBATA MASATOMO;AKIMOTO KATSUYA;TSUCHIYA TADAITSU
分类号 C09K11/00;C09K11/62;C09K11/64;C09K11/70;C09K11/74;C09K11/88;H01L33/28;H01L33/32;H01L33/50 主分类号 C09K11/00
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