| 摘要 |
PROBLEM TO BE SOLVED: To prevent color mixing, smear, and the like by limiting the move of a signal charge between adjacent photosensor sections. SOLUTION: An annular intralyer insulating film 100 for surrounding a lower- layer region of each photosensor section 120 is provided at the middle layer of a semiconductor substrate 110, thus setting the position of an overflow barrier 180 deeper at the lower-layer region of each photosensor section 120, and shallower at the surrounding region. The shallow region of the overflow barrier 180 functions as a crosswise barrier 180B. For example, light obliquely entering the photosensor section 120 is subject to photoelectric conversion at a position exceeding the crosswise barrier 180B in the lower-layer direction and is swept to further lower layer of the semiconductor substrate 110, thus preventing an electric charge from moving to an adjacent pixel. Also, at the lower-layer region of each photosensor section 120, sufficient sensitivity is obtained at the deep overflow barrier 180.
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