| 摘要 |
PROBLEM TO BE SOLVED: To lower resistance of wiring, without increasing the number of process steps by using metallic materials constituting a reflection film for additional wiring, in addition to the original wiring of driving circuits. SOLUTION: The thin-film semiconductor device consists of a pixel array section, which is composed of pixels PLXs arranged in a matrix form and reflects incident light from outside by each of the respective pixels PLXs,; a drive circuit section which is composed of plural thin-film transistors TFTs and the first wiring 7 for connecting the same and drives the pixel array section and an insulating substrate 1, which is formed integrally with the pixel array section and the drive circuit section. The pixel array section has the reflection film 9, consisting of a metallic material in order to reflect the incident light from outside and the drive circuit section includes the second wiring 10 formed of the same material as the metallic material of the reflection film 9. The second wiring 10 is laminated on the first wiring 7 across a planarizing film 8 and is electrically connected to the first wiring 7 across contact holes opened in the planarizing film 8. |
