| 摘要 |
<p>PURPOSE:To enhance light emitting efficiency through possible emission of the majority of light generated in the vicinity of a P-N junction from the surface of the P side by a method wherein the Zn diffusion region on the surface of P side for formation of an ohmic electrode is provided solely beneath an ohmic electrode in a GaAs light emitting diode. CONSTITUTION:On the surface of P side of a GaAs infrared light emitting diode wafer on which a P-N junction 1 is formed, a Zn diffused layer 3 is formed, and over it a plurality of ohmic electrodes 5 consisting of Au-Zn are formed to have a specified spacings. And all over the rear surface of an N type substrate 4 which supports the wafer 2, the second ohmic electrode 6 of Au-Sn, and while it is covered with the first photo resist film 7, all exposed regions of the diffused layer 3 are removed by etching performed through utilizing the electrode 5 as a mask. Subsequently the second photo resist film 8 is applied between electrodes 5, the circumference 7a of the film 7 are solely removed, a crevice 9 which reaches the substrate 4 from each center of films 8 on the surface is provided by dicing and by cutting them here each pellet is formed.</p> |
