| 摘要 |
PURPOSE: A charge pump device is provided, which has a high efficiency as using a high current, and also prevents a latch-up. CONSTITUTION: P type well regions(31,32) are formed in N type well regions respectively. The N type well regions are formed separately each other. Charge transfer MOS transistors(M2,M3) are formed in the P type well regions respectively. Thus, a parasitic thyristor causing latch-up is not formed. A drain region(D) of the charge transfer transistor is connected electrically to the well region where the charge transfer transistor is formed. A highly dense diffusion layer(41) is formed in the above well region, and is connected to the drain layer.
|
