| 摘要 |
PURPOSE: A method of manufacturing gate electrodes in FED is provided to simplify a manufacturing process by eliminating anti-reflection coating process, and avoid leakage currents by forming gate electrodes in a single film. CONSTITUTION: A photo resist is coated on an insulation layer(310) which is formed on a cathode electrode(300). The photo resist is exposed so as to form the post of the photo resist. A gate metal(340) is formed on the insulation layer(310) and the photo resist. After the post of the photo resist is eliminated, a protection layer(350) is formed on the gate metal(340). An active region of the insulation layer(310) is rectangular etched. An emitter is formed on the cathode electrode(300) through evaporation. And then, the protection layer(350) is eliminated.
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